High misfit epitaxial growth: Superconducting YBa2Cu3O7−x thin films on (100)BaF2 substrates
- 16 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1509-1511
- https://doi.org/10.1063/1.106295
Abstract
In situ epitaxial growth of YBa2Cu3O7−x superconducting thin films on (100)BaF2 substrates has been successful by an off‐axis dc planar magnetron sputtering method. The zero‐resistance temperatures of these thin films are about 81–84 K with transition width of 1.5 K. The characteristics of the films were examined by x‐ray diffraction, reflection high energy electron diffraction, Rutherford backscattering spectroscopy ion channeling techniques, and scanning electron microscopy. The experimental results suggest that BaF2 is a promising material as substrates or buffer layers for the epitaxial growth of high Tc superconducting thin films, especially in high frequency applications. Discussions on the heteroepitaxy of the YBCO/BaF2 system are propounded.Keywords
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