Low-Q microstrip IMPATT oscillator at 30 GHz

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (9) , 1105-1106
https://doi.org/10.1109/proc.1972.8862

Abstract

Low-Q microstrip IMPATT oscillators have been built at 30 GHz in order to obtain power sources for locked-amplifier applications. A locking bandwidth of 1300 MHz has been measured for a locking gain of 20 dB. The corresponding Q of the oscillator is 4.7.

Keywords

MICROSTRIP
DIODES
CIRCUITS
BANDWIDTH
POWER GENERATION
COAXIAL COMPONENTS
FREQUENCY
INJECTION-LOCKED OSCILLATORS
INDUCTANCE
IMPEDANCE