Electron-beam penetration in GaAs
- 1 July 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (7) , 3350-3351
- https://doi.org/10.1063/1.1662759
Abstract
Measurements of the primary electron‐beam penetration depth R in single‐crystal GaAs have been made over the electron‐beam energy range of 3–17 kV. The penetration depth is defined as the GaAs film thickness at which primary electrons of a given energy Ep just begin to emerge from the exit surface of the film with an energy of several hundred eV. The relationship between R and Ep is R=a(Ep)b μm, with a=0.027±0.003 and b=1.46±0.05. Ep is given in kV.This publication has 6 references indexed in Scilit:
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