Saturable optical absorption of the deep Te-complex center inAs
- 15 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (2) , 654-663
- https://doi.org/10.1103/physrevb.20.654
Abstract
Direct measurements of optical absorption by a deep complex in Te-doped As, referred to as the center, are reported. A novel double-waveguide configuration is employed to measure accurately the absorption coefficient of this center. The results are in agreement with earlier photoconductivity and photocapacitance measurements on this center, and are consistent with most aspects of an anomalously large lattice relaxation model which has been proposed to explain these earlier optical results. The photoconductivity results for this center predict a saturable absorption which is directly measured in this paper, and its temperature dependence is described. For a Te concentration of ≈ 3× , the absorption reaches a maximum of ∼18 for K. At lower temperatures the absorption saturates; at higher temperatures it falls off due to thermal emission from the center. These effects are calculated using a simple rate equation. Also investigated is the dependence of on photon energy. The results are in good agreement with the magnitude of the absorption cross section as measured by photocapacitance, although the absorption peaks at somewhat higher energy.
Keywords
This publication has 15 references indexed in Scilit:
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977
- Changes in the optical properties of CW (AlGa)As junction lasers during accelerated agingIEEE Journal of Quantum Electronics, 1977
- Persistent photoconductivity in donor-doped Cd1−xZnxTeJournal of Applied Physics, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Non-Γ donor levels and kinetics of electron transfer in n-type CdTeSolid State Communications, 1972
- A theory of oscillations in the output of GaAs junction lasersPhysica Status Solidi (a), 1970
- Effect of Te and S Donor Levels on the Properties ofnear the Direct-Indirect TransitionPhysical Review B, 1968
- Some Properties of a Double Acceptor Center in CdTePhysical Review B, 1964