Saturable optical absorption of the deep Te-complex center inAl0.4Ga0.6As

Abstract
Direct measurements of optical absorption by a deep complex in Te-doped Al0.4 Ga0.6As, referred to as the DX center, are reported. A novel double-waveguide configuration is employed to measure accurately the absorption coefficient αDX of this center. The results are in agreement with earlier photoconductivity and photocapacitance measurements on this center, and are consistent with most aspects of an anomalously large lattice relaxation model which has been proposed to explain these earlier optical results. The photoconductivity results for this center predict a saturable absorption which is directly measured in this paper, and its temperature dependence is described. For a Te concentration of ≈ 3×1017 cm3, the absorption reaches a maximum of ∼18 cm1 for 100T150 K. At lower temperatures the absorption saturates; at higher temperatures it falls off due to thermal emission from the center. These effects are calculated using a simple rate equation. Also investigated is the dependence of αDX on photon energy. The results are in good agreement with the magnitude of the absorption cross section as measured by photocapacitance, although the absorption peaks at somewhat higher energy.