Photovoltaic devices fabricated on electrodeposited CuInSe2 films
- 1 April 1989
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 67 (4) , 444-447
- https://doi.org/10.1139/p89-079
Abstract
Using both Al–CuInSe2 Schottky junctions and CdS–CuInSe2 heterojunctions fabricated on electrodeposited p-type CuInSe2 films, we have investigated some properties of CuInSe2. From current–voltage and capacitance–voltage measurements carried out on these devices, it was found that the electronic quality of the CuInSe2 film surface was improved after the deposition of the CdS layer. In addition, it was observed that the electronic properties of the heterojunctions were dependent on the In/Cu ratio in the electrodeposited CuInSe2 films. Using a film with In/Cu = 1.1, we successfully fabricated a cell with an active-area conversion efficiency of 5.2%. Post-fabrication air heat treatment at 180 °C on the CdS–CuInSe2 devices was found to result in an increase in the charge-carrier concentration in the electrodeposited CuInSe2 films.This publication has 0 references indexed in Scilit: