Erbium Implantation in Silicon: A Way Towards Si-Based Optoelectronics
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Ic Compatible Processing of Si:Er for optoelectronicsMRS Proceedings, 1993
- Er Luminescence in Si: A Critical Balance between Optical Activity and Pumping EfficiencyMRS Proceedings, 1993
- Evaluation of erbium-doped silicon for optoelectronic applicationsJournal of Applied Physics, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- Excitation mechanisms and optical properties of rare-earth ions in semiconductorsPhysical Review Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979