Absolute x-ray power measurements with subnanosecond time resolution using type IIa diamond photoconductors
- 1 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 124-130
- https://doi.org/10.1063/1.347104
Abstract
Photoconductive devices have been fabricated from type IIa diamonds. The sensitivity of these devices is independent of photon energy from 200 to 2200 eV. The dynamic range is 105. The large band gap of the diamond greatly reduces the sensitivity to photons with an energy less than 5.5 eV which is an attractive feature for many applications. The carrier lifetime in the material is 90 ps and the mobility is 1650 cm2/V/s at 106 V/m.This publication has 22 references indexed in Scilit:
- Transient photoconductive response of InP:FeJournal of Applied Physics, 1987
- Flat response detectors for the vacuum ultraviolet and soft x-ray region: InP:Fe photoconductorsJournal of Applied Physics, 1986
- Picosecond optoelectronic switching in insulating diamondIEEE Journal of Quantum Electronics, 1986
- A technique for i n s i t u calibration of an x-ray streak camera in the nanosecond regime using a high density Z-pinchJournal of Applied Physics, 1985
- A diamond opto-electronic switchOptics Communications, 1983
- High-speed ultraviolet and x-ray-sensitive InP photoconductive detectorsApplied Physics Letters, 1982
- Diamond dosimeter for x-ray and δ-radiationIEEE Transactions on Nuclear Science, 1977
- Spectral oscillations of photoconductivityRadiation Effects, 1970
- Ultraviolet Intrinsic and Extrinsic Photoconductivity of Natural DiamondPhysical Review B, 1967
- Electronic excitation of diamond by energetic charged particlesJournal of Physics and Chemistry of Solids, 1964