Hopping conduction in undoped low-pressure chemically vapor deposited polycrystalline silicon films in relation to the film deposition conditions
- 1 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1601-1604
- https://doi.org/10.1063/1.341799
Abstract
The conductivity of undoped low-pressure chemically vapor deposited polycrystalline silicon films has been investigated in the temperature range 77–300 K as a function of the deposition conditions of the film. At low temperatures hopping conductivity has been identified. Decrease of the deposition pressure of the polysilicon film shifts the hopping region to lower temperatures and reduces the density of localized trap states and, also, the degree of disorder.This publication has 11 references indexed in Scilit:
- Conduction in n+-i-n+ thin-film polycrystalline/silicon devices in relation to the film deposition conditionsJournal of Applied Physics, 1988
- High-performance thin-film transistors from optimized polycrystalline silicon filmsApplied Physics Letters, 1987
- Experimental study of nonlinear current-voltage behavior in undoped polycrystalline siliconJournal of Applied Physics, 1986
- Conductivity behavior in polycrystalline semiconductor thin film transistorsJournal of Applied Physics, 1982
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Hall mobility of polycrystalline siliconApplied Physics Letters, 1980
- Properties of CdS Films Prepared by Spray PyrolysisJournal of the Electrochemical Society, 1977
- Noise and electrical transport properties of polycrystalline InSb thin filmsJournal of Applied Physics, 1976
- Evaluation of Mott's Parameters for Hopping Conduction in Amorphous Ge, Si, and Se-SiPhysical Review Letters, 1973
- Growth and Characterization of Polycrystalline SiliconJournal of the Electrochemical Society, 1973