Scanning tunneling microscopy of Si(001)

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Abstract
The atomic structure of the Si(001) surface has been examined with use of scanning tunneling microscopy (STM). The STM images reveal a dimer-type reconstruction and are inconsistent with chain and vacancy models. Both buckled and nonbuckled dimers are observed, giving rise to regions of (2×1), c(4×2), and p(2×2) symmetry. The surface has a high density of vacancy-type defects, which appear to induce or stabilize buckling of the dimers at room temperature. The STM images also reveal the atomic structure at steps and defects. At high annealing temperature the step density increases dramatically, eventually leading to faceting.