Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon
- 15 March 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6) , 603-605
- https://doi.org/10.1063/1.94842
Abstract
Growth of grains with sizes many times (>50×) larger than the film thickness and with uniform (111) texture, has been achieved in ultrathin (<100 nm) films of Si on SiO2. Growth of these secondary grains is driven by minimization of anisotropic surface energy. As a result, the secondary grain growth rate increases with decreasing film thickness. The time required for growth of large secondary grains decreases with increasing temperature.Keywords
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