Numerical modeling of silicon photodiodes for high-accuracy applications, Part I. simulation programs
- 1 July 1991
- journal article
- Published by National Institute of Standards and Technology (NIST) in Journal of Research of the National Institute of Standards and Technology
- Vol. 96 (4) , 463-469
- https://doi.org/10.6028/jres.096.023
Abstract
The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D's standard user interface.Keywords
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