Abstract
The ionic conductivities of five single crystals of divalently doped silver bromide have been measured from room temperature to close to their melting point. The analyses of these data have been effected using a calculated temperature-dependent Frenkel formation energy and provide a set of defect parameters describing the formation, migration and interaction of the defect species. In addition, atomistic simulation techniques have been used to investigate ionic motion by vacancy, interstitial and interstitialcy mechanism in silver bromide. The calculated energies are in reasonable agreement with experiment but suggest that the direct interstitial jump should be re-examined as a possible transport mechanism in the silver halides. The experimental and theoretical results are compared with earlier values for silver bromide and discussed in relation to similar studies of silver chloride.

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