Growth and characterization of high quality LPEE GaAs bulk crystals
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (1-2) , 136-141
- https://doi.org/10.1016/0022-0248(87)90214-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Bulk GaAs crystal growth by liquid phase electroepitaxyJournal of Crystal Growth, 1987
- Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxyJournal of Applied Physics, 1987
- Excited-state-donor—to—acceptor transitions in the photoluminescence spectrum of GaAs and InPPhysical Review B, 1984
- Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 1983
- High purity and chrome-doped GaAs buffer layers grown by liquid phase epitaxy for mesfet applicationJournal of Electronic Materials, 1981
- Liquid phase epitaxy of high-purity GaAs on conducting n-type substratesJournal of Applied Physics, 1981
- Purity of GaAs grown by LPE in a graphite boatJournal of Crystal Growth, 1976
- Growth and properties of semi-insulating epitaxial GaAsJournal of Vacuum Science and Technology, 1975
- Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaPJournal of the Electrochemical Society, 1972
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970