Two-band modeling of narrow band gap and interband tunneling devices
- 1 August 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (3) , 1372-1375
- https://doi.org/10.1063/1.346688
Abstract
A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.This publication has 15 references indexed in Scilit:
- Negative differential resistance in InAs/GaSb single-barrier heterostructuresElectronics Letters, 1989
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperatureApplied Physics Letters, 1989
- Resonant interband tunnel diodesApplied Physics Letters, 1989
- X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuityApplied Physics Letters, 1986
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlatticesSolid State Communications, 1978
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Tunneling in a finite superlatticeApplied Physics Letters, 1973