(InAs)m(GaAs)n superlattice grown by beam-separation MBE method
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 600-605
- https://doi.org/10.1016/0039-6028(86)90479-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Ultrauniform InxGa1−xAs layers on InP grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- (InAs)m(GaAs)n superlattices grown by molecular beam epitaxyJournal of Crystal Growth, 1985
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1978