Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration
- 2 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 140-144
- https://doi.org/10.1016/0022-0248(92)90378-v
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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