Chemisorption of O on the surface of : Role of electrons and ligand geometry
- 15 December 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (12) , 6682-6689
- https://doi.org/10.1103/physrevb.26.6682
Abstract
The interaction of O with both nearly perfect and defect surfaces has been studied by ultraviolet photoemission spectroscopy. Perfect (047) surfaces, which contain fivefold O-coordinated cations, rapidly chemisorb molecular O, with an accompanying transfer of electrons from the Ti band to the molecule-surface complex. Saturation coverage of adsorbed O is less than one-half monolayer. The extramolecular relaxation-polarization shift for molecularly adsorbed O is 1.0 eV, and the O-lone-pair orbital is dominant in bonding to the surface. There is no evidence for dissociative chemisorption of O on (047). On surfaces containing a high density of defects, dissociative adsorption of O is observed; the chemisorbed species is believed to be O radicals. Some molecular adsorption of O may also occur for larger exposures. These results indicate that the presence of surface ions alone is not sufficient to catalyze the dissociation of O, in contrast to previous interpretations of data on Ti and SrTi. Presumably other Ti valence states or the more complicated ligand structure of defect sites are required for dissociation of O.
This publication has 16 references indexed in Scilit:
- Surface electronic structure of corundum transition-metal oxides:Physical Review B, 1982
- Models for the Photoelectrolytic Decomposition of Water at Semiconducting Oxide AnodesJournal of the Electrochemical Society, 1980
- Ultraviolet photoemission studies of molecular adsorption on oxide surfacesProgress in Surface Science, 1979
- Low energy photoelectron spectroscopy of solids. Aspects of experimental methodology concerning metals and insulatorsJournal of Electron Spectroscopy and Related Phenomena, 1977
- Electrode materials for photoelectrochemical devicesJournal of Crystal Growth, 1977
- The photoelectron spectra of the OH and OD radicalsChemical Physics Letters, 1977
- Realistic tight-binding model for chemisorption: H on Si and Ge (111)Physical Review B, 1976
- Band structure of V2O3, and Ti2O3Philosophical Magazine, 1975
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967