Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
- 15 April 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (8) , 4341-4348
- https://doi.org/10.1063/1.1351861
Abstract
We have studied the influence of difference growth conditions on the two-dimensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots (QDs) optimized for applications to optical devices operating around 1.3 μm (In content x≈0.5). The dots are grown by low-pressure metalorganic chemical vapor deposition on GaAs substrates. We demonstrate that the critical layer thickness corresponding to optimized single-QD layer structures (i.e., with reduced wetting layer thickness and high uniformity) can be controlled by kinetic effects. The optimized growth conditions allow us to grow six-layers stacked QD structures as active material for the fabrication of a light emitting devices operating around 1.3 μm at room temperature.This publication has 22 references indexed in Scilit:
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