Temperature effects on the photoluminescence of GaAs grown on Si
- 2 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 45-47
- https://doi.org/10.1063/1.100829
Abstract
Photoluminescence properties of as-grown and post-growth annealed GaAs directly grown on Si substrates by metalorganic vapor phase epitaxy are studied at various temperatures. At low temperature, three extrinsic lines and an intrinsic exciton line split by residual biaxial tensile stress are observed. The extrinsic lines give evidence of growth-induced defects. One of these lines, involving the presence of Si acceptors, appears after post-growth annealing (10 min at 800 °C). The biaxial stress deduced from the intrinsic lines varies with temperature; extrapolation to zero stress results in a temperature slightly below the growth temperature.Keywords
This publication has 13 references indexed in Scilit:
- Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH3Applied Physics Letters, 1988
- Dislocation reduction by impurity diffusion in epitaxial GaAs grown on SiApplied Physics Letters, 1988
- Thickness dependence of material quality in GaAs-on-Si grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1988
- Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on SiApplied Physics Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on siliconJournal of Applied Physics, 1986
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984