Luminescence study of C, Zn, Si, and Ge acceptors in GaAs
- 1 March 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (3) , 1332-1336
- https://doi.org/10.1063/1.332207
Abstract
Selective pair luminescence has been used to measure the exicted states of the shallow acceptors C, Zn, Si, and Ge in GaAs. Data for Ge are presented here for the first time while the sets of excited state energies of C, Zn, and Si are completed. These results show that the energies of the p-symmetric impurity states are influenced by the impurity potentials. The germanium excited states are found to be shifted by 3 meV with respect to the valence band compared to the corresponding states in C, Zn, and Si.This publication has 19 references indexed in Scilit:
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