Computer analysis of a short-channel BC MOSFET
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (8) , 1514-1520
- https://doi.org/10.1109/T-ED.1980.20065
Abstract
This paper describes the results of a two-dimensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current whenV_{SG} < V_{FB}. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.Keywords
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