Dielectric strength of thin passivating diamond films for semiconductor devices
- 31 August 1991
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 47 (1-3) , 496-502
- https://doi.org/10.1016/0257-8972(91)90316-o
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Some properties of metal/insulator/semiconductor structures with BN and carbon thin layers formed by the reactive pulse plasma method on silicon or SiO2 substrates and annealing effectsThin Solid Films, 1986
- Electric conduction of Al⧸C⧸SiOx⧸Si⧸Al structuresThin Solid Films, 1986
- Basic properties of metal/insulator/semiconductor structures containing borazone and diamond layers produced by the reactive pulse plasma methodThin Solid Films, 1983
- Electric charge influence on the metastable phase nucleationJournal of Crystal Growth, 1982
- Reactive pulse plasma crystallization of diamond and diamond-like carbonJournal of Crystal Growth, 1979
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972