Macroscopic Model of Formation of Vacancies in Semiconductors
- 5 February 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 30 (6) , 220-223
- https://doi.org/10.1103/physrevlett.30.220
Abstract
We treat the vacancy as a bubble of one atomic volume. We use empirical values of the surface tension measured for the metallic liquid phase to estimate the free energy of formation of this bubble. A small additive correction is made to account for covalent bonding in the semiconducting phase. The model is reasonable for cases where the Wigner-Seitz atomic radius is large compared with the dielectric screening length. Good agreement with experiment is found for available data for Si, Ge, and Sn.Keywords
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