Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors
- 15 December 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 8 (12) , 5704-5710
- https://doi.org/10.1103/physrevb.8.5704
Abstract
A simple tight-binding model is used for a derivation of transverse effective charges in III-V, II-VI, and IV-IV compounds. Introduction of Phillips's spectroscopic parameters into the model provides a very good agreement with experiment. Such a procedure is then justified by detailed comparison with the resonance integrals and the intra-atomic integrals deduced from term values, showing that a very crude tight-binding treatment can yield quantitative values in these systems.Keywords
This publication has 11 references indexed in Scilit:
- Calculated band structures, optical constants and electronic charge densities for InAs and InSbJournal of Physics and Chemistry of Solids, 1973
- Pseudopotential Calculation of Transverse Effective Charges for III-V and II-VI Compounds of the Zinc-Blende StructurePhysical Review B, 1972
- Origin of the minimum in the total energy curve of diamond using the extended Hückel theoryJournal de Physique, 1972
- The charge density in zincblende semiconductorsJournal of Physics C: Solid State Physics, 1971
- Pseudopotential Calculations of Electronic Charge Densities in Seven SemiconductorsPhysical Review B, 1971
- Effective Charges and IonicityPhysical Review Letters, 1971
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- The electronic properties of tetrahedral intermetallic compounds I. Charge distributionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- On the Description of Covalent Bonds in Diamond Lattice Structures by a Simplified Tight-Binding ApproximationJournal of Applied Physics, 1962