Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons
- 1 January 1993
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 117-118, 501-506
- https://doi.org/10.4028/www.scientific.net/msf.117-118.501
Abstract
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