Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution
- 18 June 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (25) , 2265-2268
- https://doi.org/10.1103/physrevlett.52.2265
Abstract
Using polarization-dependent angle-resolved photoemission we show that two dominating structures in the photoemission spectra are due to direct transitions from the uppermost two valence bands in silicon. The final-state band for these transitions at photon energies 10.2-21.2 eV is found to have free-electron-like dispersion. Our results imply that that threefold-symmetry emission often assigned to back-bond surface states on Si(111)2×1 is really due to bulk photoemission.Keywords
This publication has 15 references indexed in Scilit:
- Photoemission studies of surface states on Si(111)2 × 1Surface Science, 1983
- An optimized beam line and experimental station for angle resolved photoemission between 5 eV≤hv≤50 eVNuclear Instruments and Methods in Physics Research, 1983
- Angle-resolved measurements of the photoemission of electrons in the study of solidsAdvances in Physics, 1983
- Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)Physical Review Letters, 1982
- Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1Physical Review Letters, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981
- Electronic states of Si(111) surfacesJournal of Vacuum Science and Technology, 1981
- Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status reportJournal of Vacuum Science and Technology, 1980
- Angular distribution of photoelectrons from (111) silicon surface statesJournal of Vacuum Science and Technology, 1975
- Measurement of the Angle of Dangling-Bond Photoemission from Cleaved SiliconPhysical Review Letters, 1974