The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
- 15 August 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (4) , 2099-2104
- https://doi.org/10.1063/1.368270
Abstract
The temperature dependence of the current–voltage characteristics of Ni–GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.This publication has 14 references indexed in Scilit:
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