Far-infrared absorption profiles for shallow donors in GaAs-AlxGa1xAs quantum-well structures

Abstract
Previous variational calculations of the ground and 2p-like excited states of a shallow donor in a quantum well are extended to include the effects of an applied magnetic field and arbitrary donor position. The extended wave functions are then used in a theory for the absorption profiles of shallow donor transitions in quantum wells. Absorption profiles for several donor-impurity distributions are calculated and compared with recent far-infrared absorption experiments. The comparison with experiment is somewhat ambiguous, but the theory does suggest that some experimental samples may possess thin donor-impurity layers at the interfaces between semiconductors.