Far-infrared absorption profiles for shallow donors in GaAs-As quantum-well structures
- 15 July 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (2) , 951-956
- https://doi.org/10.1103/physrevb.34.951
Abstract
Previous variational calculations of the ground and 2p-like excited states of a shallow donor in a quantum well are extended to include the effects of an applied magnetic field and arbitrary donor position. The extended wave functions are then used in a theory for the absorption profiles of shallow donor transitions in quantum wells. Absorption profiles for several donor-impurity distributions are calculated and compared with recent far-infrared absorption experiments. The comparison with experiment is somewhat ambiguous, but the theory does suggest that some experimental samples may possess thin donor-impurity layers at the interfaces between semiconductors.Keywords
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