Van der Waals Epitaxial Growth of C60 Film on a Cleaved Face of MoS2
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11A) , L1892
- https://doi.org/10.1143/jjap.30.l1892
Abstract
C60 film has been grown heteroepitaxially on a cleaved face of MoS2 by means of van der Waals epitaxy. The C60 film forms a close-packed structure with its principal crystal axes parallel to those of the substrate. Although the lattice constant of the C60 crystal is much larger than that of MoS2, good heteroepitaxial growth becomes possible because of the van der Waals-type interaction between the grown film and the substrate.Keywords
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