High rate pulse generation from InGaAsP laser in selfoc lens external resonator

23 July 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (15) , 527-529
https://doi.org/10.1049/el:19810369

Abstract

High rate modulation of an InGaAsP diode laser at rates of 5–10 GHz was demonstrated using a selfoc microlens external resonator. At a rate of 5.3 GHz modelocked pulses of 30 ps duration were obtained, whereas deeply modulated output was observed at 8.1 and 9.4 GHz rates.

Keywords

MODELOCKED PULSES
SEMICONDUCTOR LASER
MODULATION
8.1 GHZ
SELFOC LENS EXTERNAL RESONATOR
INGAASP DIODE LASER
5.3 GHZ
HIGH RATE PULSE GENERATION
5 TO 10 GHZ
9.4 GHZ