Low-threshold InGaAsP/InP 1.3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facet

2 January 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (1) , 36-38
https://doi.org/10.1049/el:19860025

Abstract

The angled reactive-ion-etching (RIE) technique utilising a TiO₂ mask and Cl₂-Ar gas is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.

Keywords

SEMICONDUCTOR LASERS
OPTICAL WORKSHOP TECHNIQUES
DOUBLY BURIED-HETEROSTRUCTURE LASERS
TIO2 MASK
FACET MIRROR FABRICATION
III-V SEMICONDUCTORS
ANGLED RIE TECHNIQUE
REACTIVE-ION-ETCHED FACET
INGAASP/INP
AGING TEST
DBM LASERS
CL2-AR GAS

This publication has 0 references indexed in Scilit: