On the substrate current noise in MOS transistors beyond pinchoff

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (2) , 331-332
https://doi.org/10.1109/PROC.1971.8169

Abstract

Low-frequency current noise flowing through the substrate contact has been observed in MOS transistors beyond pinchoff by means of a special circuit preventing a floating substrate potential. The noise is of the same order of magnitude as that observed in junction-gate FETs and evidently is due to impact ionization.

Keywords

MOSFETS
CIRCUIT NOISE
FETS
IMPACT IONIZATION
FREQUENCY
BREAKDOWN VOLTAGE
CURRENT MEASUREMENT
NOISE MEASUREMENT
DIODES
MOS CAPACITORS

This publication has 0 references indexed in Scilit: