Evidence for a surface-bound free radical mechanism during the decomposition of iPr2Te in the presence or absence of mercury and/or Me2Cd under MOVPE conditions obtained from deuterium-labelled precursors
- 30 April 1994
- journal article
- Published by Elsevier in Polyhedron
- Vol. 13 (8) , 1253-1265
- https://doi.org/10.1016/s0277-5387(00)80259-4
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPEAdvanced Materials for Optics and Electronics, 1994
- Coupled gas and surface reactions in the organometallic vapor-phase epitaxy of cadmium tellurideJournal of Crystal Growth, 1992
- The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium tellurideProceedings of the IEEE, 1992
- Pyrolysis pathways of symmetrical and unsymmetrical organotellurium(II) compoundsOrganometallics, 1991
- Modeling of the coupled kinetics and transport in the organometallic vapor-phase epitaxy of cadmium tellurideJournal of Crystal Growth, 1991
- Decomposition and Impurity Analysis of Organotellurium Precursors for MOVPEMRS Proceedings, 1990
- Chemical kinetics of telluride pyrolysisJournal of Crystal Growth, 1989
- Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materialsJournal of Crystal Growth, 1988
- On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase EpitaxyJournal of the Electrochemical Society, 1987
- An investigation of the pyrolysis of dimethylcadmium and diethyltelluride by in-situ gas sampling and analysisJournal of Crystal Growth, 1984