Crystalline correlation of epitaxial Si films with underlying spinel films in Si/(MgO Al2O3) spinel/Si structure
- 15 October 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8) , 757-759
- https://doi.org/10.1063/1.94495
Abstract
Using epitaxial magnesia spinel (MgO Al2O3) films on (100) Si, heteroepitaxial Si films (0.6–3 μm) on these substrates are obtained by a conventional chemical vapor deposition method. The crystallinity of both epitaxial Si and spinel films was investigated by x‐ray diffraction techniques. Silicon film quality becomes more perfect on thinner spinel films with smoother surfaces in the range of more than ∼0.1 μm, in spite of the spinel crystal perfection becoming inferior with decreasing film thickness. These results are discussed in terms of the spinel surface roughness effect on Si nuclei coalescence.Keywords
This publication has 7 references indexed in Scilit:
- Vapor Phase Epitaxial Growth of MgO · Al2 O 3Journal of the Electrochemical Society, 1982
- Growth of thin silicon films on sapphire and spinel by molecular beam epitaxyApplied Physics Letters, 1980
- Silicon‐on‐Sapphire Crystalline Perfection and MOS Transistor MobilityJournal of the Electrochemical Society, 1978
- Epitaxial growth of yttrium iron garnet by chemical vapor depositionJournal of Crystal Growth, 1977
- Early growth of silicon on sapphire. II. ModelsJournal of Applied Physics, 1976
- Early growth of silicon on sapphire. I. Transmission electron microscopyJournal of Applied Physics, 1976
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971