Characterization of surface oxides and oxide desorption on InGaAs

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Abstract
In0.53Ga0.47As layers grown on InP substrates by metalorganic chemical vapor deposition were oxide ‘‘capped’’ using a UV ozone treatment. Oxide removal was accomplished by thermal desorption in vacuum and by remote hydrogen plasma treatments carried out in reaction chambers attached to a high spectral resolution x-ray photoelectron spectrometer (XPS). The XPS spectral results showed the oxide layer to be composed of a mixture of oxides. Subsequent desorption occurred over a range of temperatures. Desorption of As and In oxides, oxygen transfer from oxidized to nonoxidized sites and the formation of the suboxides occurred as intermediate stages. Complete removal of all oxides was observed at a temperature above the decomposition temperature of the In0.53Ga0.47As. The use of atomic H, generated in a remote plasma system, to enhance oxide removal was found to be a more effective procedure; the complete removal of all oxides was achieved at a substrate temperature of 192 °C. The resulting surface composition was In0.60Ga0.46As and the surface band bending was estimated to be <0.2 eV.

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