Nucleation Phenomena in Electron‐Hole Drop Formation in Ge and Si. II. Application to Observable Phenomena

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Abstract
The expressions derived in Part I for electron‐hole drop (EHD) nonequilibrium nucleation rates and dynamic equilibrium concentration are used to calculate the following results for Ge samples under continuous excitation: 1. very slow metastable time dependence of the EHD concentration, 2. EHD signal versus generation rate G for different histories of excitation, 3. mathematically well defined equilibrium and non‐equilibrium EHD thresholds, 4. procedure for accurately determining the EHD surface tension from threshold data at a given temperature, 5. modified EHD‐free exciton phase diagram including the effeets of metastability and finite lifetime, 6. EHD radius versus temperature for different historics of excitation. Results for the modified phase diagram of Si are also presented.