Reactive ion etching of PECVD silicon nitride in SF6 plasma
- 1 May 1993
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 200 (3) , 371-374
- https://doi.org/10.1016/0022-3115(93)90311-l
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon GasesJournal of the Electrochemical Society, 1990
- Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 PlasmaJournal of the Electrochemical Society, 1990
- Selective etching of silicon nitride using remote plasmas of CF4 and SF6Journal of Vacuum Science & Technology A, 1989
- Reactive Ion Etching in SF 6 Gas MixturesJournal of the Electrochemical Society, 1987
- Mass spectrometric studies of plasma etching of silicon nitrideJournal of Vacuum Science & Technology B, 1985