DC and microwave performance of OMVPE-grown AlInAs/InP HEMTs

25 October 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (22) , 1912-1913
https://doi.org/10.1049/el:19901231

Abstract

AlInAs/InP HEMTs with extrinsic transconductances of 267mS/mm at 300K and 342mS/mm at 77K are reported. The corresponding intrinsic transconductance at 300K is estimated to be 615mS/mm. These 0.80μm gate length devices also exhibit high microwave gains with f_max as high as 65GHz and f_T of 22GHz. These are some of the best results reported for InP channel devices.

Keywords

0.8 MICRON
267 MS
INP CHANNEL DEVICES
EQUIVALENT CIRCUIT MODEL
OMVPE-GROWN
22 GHZ
ALINAS-INP
MICROWAVE PERFORMANCE
342 MS
DC PERFORMANCE
300 K
POWER DEVICES
EXTRINSIC TRANSCONDUCTANCES
615 MS
77 K
INTRINSIC TRANSCONDUCTANCE
65 GHZ

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