Memory switching in amorphous silicon devices
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1273-1280
- https://doi.org/10.1016/0022-3093(83)90398-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Threshold switching in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Switching in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1982
- Electrothermal model of switching in amorphous silicon filmsJournal of Vacuum Science and Technology, 1980
- Conduction processes and threshold switching in amorphous Si filmsJournal of Vacuum Science and Technology, 1979
- The threshold characteristics of chalcogenide-glass memory switchesJournal of Non-Crystalline Solids, 1979
- The mechanism of threshold switching in amorphous alloysReviews of Modern Physics, 1978
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Electronic conduction and switching in chalcogenide glassesIEEE Transactions on Electron Devices, 1973
- Switching in elemental amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968