The effect of MOS Channel length on the performance of insulated gate transistors
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (8) , 413-415
- https://doi.org/10.1109/edl.1985.26174
Abstract
The effect of MOS channel length on n-channel 600-V insulated gate transistors (IGT's) is evaluated. When the channel length was decreased from 1.9 to 0.8 µm, a doubling of the forward conduction current was measured at a forward drop of 2 V for IGT's with a turn-off time of 2 µs. Also, a better forward drop versus turnoff time tradeoff were observed. However, a 25-50-percent decrease in latching current was measured for the short-channel devices under dynamic switching conditions at 150°C.Keywords
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