Excitons near interfaces of polar crystals
- 15 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (15) , 8805-8810
- https://doi.org/10.1103/physrevb.37.8805
Abstract
A new model describing an interface exciton for the cases where the image potentials of the electron and hole are attractive one-dimensional Coulomb-like potentials is proposed. The model describes the exciton by a combination of a planar exciton and localized motions of the electron and hole to the interface in the direction perpendicular to it. Numerical calculations are carried out to investigate the contributions of the bulk and surface LO phonons to the ground-state energy of the exciton, and the conditions for which the model becomes increasingly accurate are discussed.Keywords
This publication has 14 references indexed in Scilit:
- Exciton in a slab of polar crystalPhysical Review B, 1987
- Polaron effects on excitons in GaAs-As quantum wellsPhysical Review B, 1987
- The behaviour of excitons near the interface of a polar crystalPhysica Status Solidi (b), 1986
- Wannier‐Mott Exciton States in Two‐Layer Periodic StructuresPhysica Status Solidi (b), 1985
- Excitonic polaritons in electric fields at GaAs surfacesPhysical Review B, 1984
- Eigenstates of Wannier excitons near a semiconductor surfacePhysical Review B, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Wannier-Mott excitons in semi-infinite crystals: Wave functions and normal-incidence reflectivityPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- The Surface Effect on the Reflectivity Spectrum Originating from a Large Radius ExcitonJournal of the Physics Society Japan, 1976