Photoluminescence from pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy: Variation of the band gap with high pressure
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 2018-2021
- https://doi.org/10.1116/1.586178
Abstract
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