Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Differential ion damage and its annealing behavior in AlAs/GaAs heterostructuresJournal of Applied Physics, 1991
- A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy-ion irradiationJournal of Applied Physics, 1991
- Temperature dependence of compositional disordering of GaAs-AlAs superlattices during MeV Kr irradiationPhysical Review B, 1990
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987