Enhanced capacitor for one-transistor memory cell
- 1 October 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (10) , 1187-1189
- https://doi.org/10.1109/T-ED.1976.18569
Abstract
Ion implantation has been used to increase the depletion-layer capacitance beneath the inversion layer of an MOS capacitor in order to enhance the charge storage per unit area. Boron and arsenic implants were used to increase the depletion-layer capacitance, approximately halving the area required for a given charge storage.Keywords
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