The detection sensitivity of heavy impurities in Si using 280 keV He2+ and C2+ back-scattering
- 1 December 1973
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 19 (1) , 137-144
- https://doi.org/10.1016/0040-6090(73)90030-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Channeling measurements in As-doped SiJournal of Applied Physics, 1972
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERINGApplied Physics Letters, 1969
- Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°CRadiation Effects, 1969