AlGaAs/GaAs heterojunction bipolar transistors fabricated with various collector-carrier-concentrations

1 February 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (3) , 203-205
https://doi.org/10.1049/el:19900137

Abstract

Effects of the collector carrier concentration N_C of AlGaAs/GaAs self-aligned HBTs with a buried collector on highfrequency performances are studied experimentally. f_T increases monotonically with N_C while f_max has a maximum point for the intermediate doping of N_c = 5 × 10¹⁶cm⁻³.

Keywords

HIGH FREQUENCY PERFORMANCES
COLLECTOR-CARRIER-CONCENTRATIONS
BURIED COLLECTOR
ALGAAS-GAAS
HETEROJUNCTION BIPOLAR TRANSISTORS
HBT
III-V SEMICONDUCTORS
MICROWAVE DEVICE

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