FIB-Assisted Cl 2 Gas Etching of GaAs

1 August 1989

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 1089, 52-64
https://doi.org/10.1117/12.968514

Abstract

The FIB-assisted Cl₂ etching of GaAs were studied by using 10 keV and 5 keV Ga⁺ ions. The etching yield, which is defined as the number of GaAs molecules etched by one Ga⁺ ion, was about 20 time as large as the sputtering yield without C12 molecules for both 10 keV and 5 keV ions. The PL intensity of the etched sample with 10 keV and 5 keV ions were 1/30~1/40 and ~1/10, respectively, compared to the initial value. From these results, it is concluded that the use of Ga⁺ ions with lower energy is effective to reduce the damage induced in GaAs processed by Ga⁺ FIB assisted C1₂ etching.

Keywords

IONS
SPUTTER DEPOSITION
GALLIUM ARSENIDE
ETCHING
MOLECULES

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