Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (11) , 2411-2413
- https://doi.org/10.1109/16.62302
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- A model for silicon-oxide breakdown under high field and current stressJournal of Applied Physics, 1988
- Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesApplied Physics Letters, 1988
- Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdownApplied Physics Letters, 1987
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986