GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source

Abstract
We describe the use of a low‐temperature technique, which is based on H atoms from a microwave electron cyclotron resonance (ECR) H2 plasma, to remove surface oxides and carbon from a single‐crystal GaSb surface. Our experiments indicate that oxide removal occurs at a temperature of ∼250 °C, much lower than that for thermal evaporation of the oxide. In addition, we have found that subsequent exposure to N atoms from a N2 plasma leaves a thin nitride layer, which prevents degradation of the H‐cleaned surface. To demonstrate this technique, we have applied it to the processing of an AlGaSb PIN photodiode, which is fabricated with molecular‐beam epitaxy material. Our electrical measurements show that the leakage current, after surface Sb‐oxide removal, is significantly reduced from that before the ECR‐H treatment.

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