Noise modeling of microwave heterojunction bipolar transistors
- 1 May 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (5) , 883-889
- https://doi.org/10.1109/16.381984
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- High speed SiGe-HBT with very low base sheet resistivityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-noise performance of SiGe heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequenciesIEEE Transactions on Microwave Theory and Techniques, 1995
- Evaluation of noise parameter extraction methodsIEEE Transactions on Microwave Theory and Techniques, 1993
- Noise characterization and modeling of polysilicon emitter bipolar junction transistors at microwave frequenciesAIP Conference Proceedings, 1993
- Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequenciesElectronics Letters, 1992
- First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBTElectronics Letters, 1991
- Microwave noise performance of InP/InGaAs heterostructure bipolar transistorsIEEE Electron Device Letters, 1989
- Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figureSolid-State Electronics, 1977
- Noise in solid-state devices and lasersProceedings of the IEEE, 1970